| 日時: |
2012-10-01 16:00 - 17:00 |
| 場所: |
4号館2階輪講室1 |
| 会議名: |
物構研談話会（12-25） Crystalline Formation of Polycrystalline Co-Based Full-Heusler Alloy Films Observed by HRTEM with in-situ Annealing |
| 連絡先: |
小野寛太 4205 |
| 講演者: |
廣畑貴文先生 (ヨーク大学電気学科) |
| アブストラクト: |
The next-generation magnetic memories require an ideal spin-polarised
electron source, which can be achieved by using a half-metallic
Heusler-alloy film. For the Heusler-alloy film implementation, it is
critical to realise both large volume of coherent magnetisation reversal
and high interfacial atomic ordering. In this review, we present
solutions to satisfy these requirements by measuring activation volumes
and observing cross-sectional atomic structures. We find that the
polycrystalline films possess 10 times larger activation volume than the
epitaxial ones and also form the perfectly ordered crystalline phase.
These features are very useful for the application of the Heusler-alloy
films into a future magnetic memory.
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