測定器開発室セミナー

日時: 2012-10-01 16:00 - 17:00
場所: 4号館3階345号室
会議名: Report on DC-DC Converters for HEP and the Role of GaN FETs
連絡先: 三部/5677
講演者: Prof. Satish Dhawan  (Yale University)
講演言語: 英語
URL: http://rd.kek.jp/seminar_01.html
アブストラクト: Steady progress is being made on the DC-DC converters for the future
collider detector front end chips. Our group is focused on air core
inductors with 48 Volt feed into the Detector and explore the use GaN
FETS to increase the overall power delivery efficiency.

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