| 日時: |
2010-06-14 15:00 - 16:00 |
| 場所: |
3号館4階会議室425 |
| 会議名: |
How to Deliver Very Large Amounts of Low Voltage Current to HEP Detectors in High Radiation & Magnetic Fields? |
| 連絡先: |
海野（yoshinobu.unno kek.jp） |
| 講演者: |
Prof. Satish K Dhawan (Yale University) |
| 講演言語: |
英語 |
| アブストラクト: |
DC-DC Converter Plug in cards with air coils have been developed and tested. Two different commercial chips are used; one is monolithic while the other is a 3 die MCM (multi chip module). MCM can have optimized version of the FET switches for the high and low side with a separate converter chip. All three can be fabricated with different technologies and in principle have better performance. However the radiation results can be difficult to understand. One of the purposes was to see if the noise was more with the MCM monolithic converter; it does not seem to be the case.
The above converter chips are not radiation resistant. We are to study the conducted and radiated noise with the noise with the KPiX chip printed circuit boards. When tested with the ATLAS Silicon tracker and RHIC Polarimeter detector, there was no additional noise due to the close proximity of these cards while also supplying power to the readout chips. There is radiated noise to the silicon strips that can be made negligible by using 20 µm of Al shield.
Initial power pulsing tests have been done with an electronic load. A National semiconductor application engineer is looking into simulating SiD conditions to obtain faster switching with smaller output capacitors.
Our investigation has lead to technology for radiation resistant LDMOS CMOS devices at 12 -20 volts while using thin oxide of 5 -7 nm. Two foundries have been identified and verified.
Our focus is on commercial devices as there are very little power device ASIC design capability available in the US HEP community.
Gallium Nitride devices offer high frequency and very high radiation resistance as some of the transistor structures do not use oxide insulator.
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