| 日時: |
2012-01-26 16:00 - 18:00 |
| 場所: |
4号館2階輪講室1 東海1号館324室 |
| 会議名: |
物構研談話会 |
| 連絡先: |
中尾裕則4868 |
| 講演者: |
Dr. Sergey SUTURIN (Ioffe Physical Technical Institute, St. Petersburg, Russia) |
| 講演言語: |
英語 |
| アブストラクト: |
Design of novel materials for micro and nano-electronics requires
application of appropriate characterization methods for analyzing
crystal structure, lattice perfection and morphology of the fabricated
samples. As the time goes by, the individual components of electronic
and magnetic devices get smaller and smaller, while the size and
boundary effects in these components become more and more important.
While various direct space techniques are available for morphological
studies at nanometer scale, these techniques are usually ex-situ and
are often destructive to the sample.
X-ray and electron diffraction methods are known to be very suitable
not only for non-destructive study of crystal structure but also for
investigating crystal termination planes, domain boundaries and
correlations in nanoparticles distribution. These investigations
require going beyond the Bragg reflection core so that a wider range
of reciprocal space is explored. Reflection shape, appearance of
streaks stretching out, presence of multiple reflection cores becomes
important. Therefore it is very challenging to be able to record 3D
intensity distribution in vicinity of Bragg reflections, along the
streaks and anywhere else in the reciprocal space.
With the development of 2D detectors three-dimensional mapping
becomes more and more conventional in X-ray diffraction as well as in
grazing incidence small angle X-ray scattering (GISAXS). However, very
few reports exist so far on 3D imaging using high-energy electron
diffraction (RHEED). The latter technique is one of the few to be used
directly during the sample growth and is affordable in the lab with no
requirement for costly synchrotron radiation experiments.
In this presentation the 3D imaging approach using both X-rays and
electrons will be demonstrated following the diffraction studies in Co
/ MnF2 / CaF2 / Si system. The data obtained is supposed to be
relevant for understanding faceting, strain distribution and lattice
perfection in nanoscale epitaxial heterostructures. New technique for
taking and processing three-dimensional RHEED data will be presented.
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