| 日時: |
2010-11-17 15:00 - 17:00 |
| 場所: |
PF研究棟2階会議室/東海1号館116室 |
| 会議名: |
物構研セミナー |
| 連絡先: |
tel./5656 |
| 講演者: |
Prof. Nikolai Sokolov (Ioffe Physical-Technical Inst. of the RAS) |
| 講演言語: |
英語 |
| アブストラクト: |
"Growth and properties of epitaxial Co / fluoride nanostructures on silicon"
Recent research activities in the field of epitaxial Co / fluoride nano- and heterostructures on silicon will be presented. The structures have been grown and studied in the Group of Epitaxial Insulators using molecular beam epitaxy (MBE), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and magneto-optical Kerr effect measurements (MOKE). Scanning and transmission electron microscopy (SEM, TEM), X-ray diffraction (XRD and SXRD), photoelectron spectroscopy (XAS, XPS) and X-ray magnetic circular dichroism (XMCD) studies have been carried out in close collaboration with a number of other research groups. |
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