| DATE: |
2012-10-01 16:00 - 17:00 |
| PLACE: |
Room 345, Building 4, 3rd floor |
| TITLE: |
Report on DC-DC Converters for HEP and the Role of GaN FETs |
| CONTACT: |
Mibe/5677 |
| SPEAKER: |
Prof. Satish Dhawan (Yale University) |
| LANGUAGE: |
English |
| URL: |
http://rd.kek.jp/seminar_01.html |
| ABSTRACT: |
Steady progress is being made on the DC-DC converters for the future
collider detector front end chips. Our group is focused on air core
inductors with 48 Volt feed into the Detector and explore the use GaN
FETS to increase the overall power delivery efficiency. |
