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Chuan Liao
QUP Postdoctoral Fellow
e-mailliao-at-post.kek.jp
I'm Chuan Liao, born in Zhangjiajie, Hunan province, China. I earned my Ph.D. degree from the University of Hamburg, Germany. I've been dedicated to detector research since 2017, and it's a passion I intend to pursue for the rest of my life. Outside of work, I enjoy playing basketball. Feel free to reach out if you have any questions about me.
Research Content
Since 2016, I have been working on silicon detectors. From 2016 to 2019, I utilized TCAD to simulate silicon detector properties with various designs. From 2019 to 2023, I continued my research in Hamburg, focusing on radiation-induced defects in silicon crystals and their effects on detector properties, including electric field and leakage current.
During my Ph.D. at Hamburg, I conducted numerous measurements, including Thermally Stimulated Current (TSC), Thermally Stimulated Capacitance (TS-Cap), and Deep Level Transient spectroscopy (DLTS). These techniques allowed me to characterize radiation-induced defect properties such as concentration, energy level in the band gap, and cross-section. My research has uncovered many interesting findings about these defects, detailed in my research results.
If you're interested in learning more about my work, please don't hesitate to reach out.
[Fig. For 23 GeV proton irradiation:]
[Fig. For 5.5 MeV electron irradiation:]
[Fig. For 60Co g-ray irradiation (1.3 MeV photon)]
